GE DS200IIBDG1A Insulated Gate Bipolar Transistor

GE DS200IIBDG1A Insulated Gate Bipolar Transistor

Technical data of product parameters

The GE DS200IIBDG1A is an insulated gate bipolar transistor (IGBT) module used in high-power industrial applications to provide reliable and efficient switching of electrical power. It is part of the GE Power Conversion family of IGBT modules and is designed to provide high performance and durability in a variety of different applications.

The DS200IIBDG1A IGBT module features advanced control algorithms that help to minimize switching losses and improve efficiency, even when operating at high power levels. It also has a rugged construction that allows it to withstand harsh operating conditions and temperature extremes.

Other features of the GE DS200IIBDG1A IGBT module include:

• High current capacity, with a maximum current rating of 1,200 A
• High voltage capacity, with a maximum voltage rating of 1,200 V
• Advanced thermal management features, including integrated temperature sensors and thermal protection circuitry
• Support for a wide range of industrial applications, including motor drives, power supplies, and renewable energy systems
• Built-in diagnostics and monitoring tools for easy maintenance and support

Overall, the GE DS200IIBDG1A IGBT module is a high-quality and reliable module that is designed to provide efficient and accurate control of high-power electrical systems. It is a versatile module that can be used in a variety of different industrial applications and is built to withstand the harsh operating conditions of industrial environments.

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