ABB GVC736BE101 3BHE019719R0101 thyristor module

ABB GVC736BE101 3BHE019719R0101 thyristor module

Technical data of product parameters

ABB GVC736BE101 3BHE019719R0101 is a power semiconductor electronic device used for switching equipment currents in industrial equipment. It is an integrated gate commutated thyristor (IGCT), similar to gate off thyristors, which is a fully controllable power switch that can be controlled by its control terminal (i.e. gate) to control its switching status. This device can be used to control the current of high-power industrial equipment, such as steel rolling, rail transit, and other occasions that require high-capacity variable frequency speed regulation. The following will further explore the principles and applications of IGCT devices.
Thyristor is a semiconductor device composed of PN junctions that can flow current to a circuit with only one direction. Thyristors do not require an external voltage to operate. By applying a certain forward voltage to the PN junction, the current can be introduced into the PN junction, and then applying a reverse voltage to the PN junction can cut off the current. The output voltage and current of the thyristor are affected by the control voltage, but cannot be controlled in reverse.
Gate turn-off thyristor (GTO) is a fully controlled device with greater flexibility than traditional thyristors, and is widely used in situations such as steel rolling and rail transit that require high capacity variable frequency speed regulation. However, because the driving circuit of GTO is very complex and has a large power consumption, additional absorption circuit is required when turning off. Therefore, with the continuous improvement of the performance of insulated gate bipolar junction transistor (IGBT), IGCT and other devices, GTO is gradually replaced.
IGCT is a power semiconductor electronic device jointly developed by Mitsubishi and Yokogawa. Like GTO thyristors, IGCT is a fully controllable power switch, which means it can control its switching status through its control terminal (i.e. gate). The switching component in IGCT devices is a gate commutated thyristor, which can be controlled in the opposite direction of current flow, and is therefore widely used in the control of high-power industrial equipment.
The main advantages of IGCT are:
Can withstand high voltage and current, suitable for high-power applications.
Having lower switching and conduction losses can improve energy efficiency.
It has lower electromagnetic interference and noise because it does not require additional absorption circuits.

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